Hot Carrier Temperatures in Halide Perovskites: A Closer Look
Jia Wei Melvin Lim a b, David Giovanni a, Marcello Righetto c, Minjun Feng a, Subodh Gautam Mhaisalkar d e, Nripan Mathews d e, Tze Chien Sum a
a NTU Singapore - Nanyang Technological University, Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Link, 21, Singapore, Singapore
b Energy Research Institute @NTU (ERI@N), Interdisciplinary Graduate Programme, Nanyang Technological University, Singapore
c Department of Physics and Astronomy and London Centre for Nanotechnology, University College London, United Kingdom
d NTU Singapore - Nanyang Technological University, School of Materials Science and Engineering, Nanyang Avenue, 50, Singapore, Singapore
e Energy Research Institute, Nanyang Technoological University, 50 Nanyang Drive
International Conference on Hybrid and Organic Photovoltaics
Proceedings of 13th Conference on Hybrid and Organic Photovoltaics (HOPV21)
Online, Spain, 2021 May 24th - 28th
Organizers: Marina Freitag, Feng Gao and Sam Stranks
Oral, Jia Wei Melvin Lim, presentation 049
Publication date: 11th May 2021

Halide perovskites have garnered tremendous attention as potential materials for next-generation photovoltaic technologies as they possess slow hot-carrier cooling properties [1]. The hot-carrier cooling rates can  extend into the ps-time range in halide perovskite nanocrystals due to an enhanced phonon bottleneck, which underlies the possibility of achieving elevated carrier temperatures and low threshold multiple exciton generation in these materials [2, 3]. These properties posit halide perovskites as a promising absorber material to overcome the Shockley-Queisser limit, for instance, by their implementation in hot carrier solar cells (HCSCs).

 

Elevated carrier temperatures are a prerequisite for high open circuit voltages in a HCSC and ultimately determines their maximum efficiency [4]. Hence, the correct determination of the carrier temperature is of utmost importance. In this presentation, we will critically examine the commonly adopted procedures for determining the carrier temperatures in halide perovskites and the degree of comparability of the results between studies. A proposed fitting approach for determining the carrier temperatures from the transient absorption spectra more consistently and reliably will also be presented. Ultimately, the focus of this talk is to discuss how these discrepancies may influence the interpretations of hot carrier cooling processes in halide perovskites, how to overcome these pitfalls, and how it may affect the development of actual hot carrier devices in the real-world.

Financial support from the Nanyang Technological University start-up Grant M4080514; JSPS-NTU Joint Research Project M4082176; the Ministry of Education AcRF Tier 1 Grant RG91/19 and Tier 2 Grants MOE2016-T2-1-034, MOE2017- T2-2-002, and MOE2019-T2-1-097; and from the Singapore National Research Foundation (NRF) through the NRF Investigatorship NRF-NRFI-2018-04 and Competitive Research Programme NRF-CRP14-2014-03 is gratefully acknowledged.

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