Radiation Hardness of Perovskite Solar Cells Based on Aluminium-Doped Zinc Oxide Electrode under Proton irradiation
Declan Hughes a, Jérémy Barbé a, Zhengfei Wei a, Adam Pockett a, Harrison Lee a, Kieth Heasman b, Matt Carnie a, Trystan Waston a, Wing Tsoi a
a SPECIFIC – Swansea University, Materials Research Centre, College of Engineering, UK, Bay Campus, Swansea, SA1 8EN,, SWANSEA, United Kingdom
b Advanced Technology Institute (ATI), University of Surrey, UK, Guilford, United Kingdom
International Conference on Hybrid and Organic Photovoltaics
Proceedings of 13th Conference on Hybrid and Organic Photovoltaics (HOPV21)
Online, Spain, 2021 May 24th - 28th
Organizers: Marina Freitag, Feng Gao and Sam Stranks
Oral, Declan Hughes, presentation 016
Publication date: 11th May 2021

Due to their high power-to-weight ratio (specific power) and potential to be fabricated as flexible devices, Perovskite solar cells (PSCs) have gained increasing interest from the aerospace sector to supersede the current PV technology. However, before they can be deployed into space, their resistance to ionizing radiations, such as high‐energy protons, must be demonstrated. Here, we investigate the effect of 150 keV protons on the performance of PSCs based on aluminium‐doped zinc oxide (AZO) transparent conducting oxide (TCO). AZO was used due to its low-cost, nontoxicity and abundance. A record power conversion efficiency of 15% and 13.6% is obtained for cells based on AZO under AM1.5G and AM0 illumination, respectively. It is demonstrated that the PSCs can withstand proton irradiation up to 1x1013 protons/cm2 without significant loss in efficiency. At this proton irradiation dose, Si or GaAs solar cells would be completely or severely degraded. From 1x1014 protons/cm2, a decrease in short‐circuit current of PSCs is observed. Through non-destructive characterisation techniques such as Raman spectroscopy, Photoluminescence (PL) and Transient Photovoltage (TPV), the results highlight interfacial degradation due to the deterioration of the Spiro‐OMeTAD holes transport layer during proton irradiation. The structural and optical properties of perovskite remain intact up to high fluence levels and although shallow trap states are induced by proton irradiation in perovskite bulk at low fluence levels, charges are released efficiently and are not detrimental to the cell's performance. This work highlights the potential of PSCs based on AZO TCO to be used for space applications and gives a deeper understanding of interfacial degradation due to proton irradiation.

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