Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV19)
Publication date: 6th February 2020
Currently, the most popular method for the formation of the hole-selective layer in highly-efficient perovskite solar cells (PSCs) is a deposition from a solution by a spin-coating technique. However, this method introduces high material waste and is applicable only for flat substrates. In particular, this becomes an important issue for the dopant-free hole transporting materials, as it is practically not possible to deposit films <10 nm uniformly, without exposure of the substrate to the perovskite.
Recently, we have synthesized hole-selective phosphonic acid V1036 and used it for the modification of the ITO surface. Formation of the monolayer was proved by means of several techniques, including contact angle measurements, FTIR, SFG etc. Devices with such a layer demonstrated reasonably good performance of 17.8% [1]. In this work, we are further developing this concept by means of molecular engineering. Starting from the V1036, two new modifications (V1193 and V1194) were synthesized. PSCs in p-i-n configuration with these materials are routinely demonstrating over 20% power conversion efficiency, with the highest achieved result of 21.2%.
We believe that by further optimization of the molecular structure even better result can be achieved, without compromising price and stability. Further strategies for the molecular engineering will be discussed over the course of the presentation, trying to elucidate the most promising pathways.