Impact of device structure and interfacial layers on the performance of Polymer Solar Cells using ITIC/derivatives as non-Fullerene Acceptor
Pavlo Perkhun a, Riva Karsifi a, Birger Zimmermann b, Uli Würfel b, Christine Videlot-Ackermann a, Olivier Margeat a, Jean-Jacques Simon c, Jörg Ackermann a
a Aix-Marseille University, Centre Interdisciplinaire de Nanosciences de Marseille CINaM, UMR CNRS 7325, Marseille, France, CINaM Campus de Luminy, Marseille, 13288, France
b Fraunhofer Institute for Solar Energy Systems ISE, Germany, Heidenhofstraße, 2, Freiburg im Breisgau, Germany
c Aix Marseille University, CNRS UMR 7334, IM2NP, Marseille, France, France
International Conference on Hybrid and Organic Photovoltaics
Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV18)
Benidorm, Spain, 2018 May 28th - 31st
Organizers: Emilio Palomares and Rene Janssen
Poster, Pavlo Perkhun, 304
Publication date: 21st February 2018

During the last two years, the power conversion efficiencies (PCEs) of polymer solar cells (PSCs) could be increased beyond 13% for single and 14% for tandem heterojunctions due to the discovery of novel non-fullerene acceptor (NFA) [1, 2]. Among those NFAs the family of the ITIC based on indacenodithieno-[3, 2-b]-thiophene, (IDT), usually end-capped with 2-(3-oxo-2, 3-dihydroinden-1-ylidene)-malononitrile has attracted high attention [1]. We have recently demonstrated that use of ITIC derivatives in ternary blend approaches allow even to increase Voc in PSC using fullerene acceptors [3]. While fullerene based PSC have been intensively studied in the past and the relation between device structure and interfacial layers on the performance of fullerene based device was established, this has not been done for NFA based solar cells. Indeed, the highest recorded efficiencies are obtained with inverted device structures using MoOx as the hole extraction layer [1, 4].

Here, we study in detail the impact of the device structure and interfacial layers on the performance of PSCs using PBDB-T polymer as a donor and ITIC derivatives as non-fullerene acceptors ternary blends. In the past, we have optimized normal device structures using ZnO as an electron extraction layers for fullerene based PSC [5, 6]. Firstly, we applied such device structures to the ITIC/PBDB-T blend and have optimized the processing parameters, including solvent vapor annealing. Furthermore, we processed inverted device structures using MoOx and also solution processable metal oxides such as NiOx. The impact of the device structures and interfacial layers on the PSCs performance will be discussed in detail.

 

 

1. Zhao W, et al., J Am Chem Soc. 2017, 139(21), 7148-51.

2. Y. Zhang et al., Ad. Mat. 2018, 1707508.

3. C. Wang, et al., Nano Energy, 2017, 37, 24–31.

4. J. Mater. Chem. C, 2017, 5, 1275—1302.

5. S. Ben Dkhil, et al., Adv. Energ. Mat., 2016, 1600290, 1-10.

6. S. Ben Dkhil, et al., Adv. Energ. Mat., 2014, 4, 1400805.

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