Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV18)
Publication date: 21st February 2018
Perovskite solar cells attract tremendous attention as alternative photovoltaic technologies for the future energy market, achieving a certified efficiency of 22.7%. In the conventional n-i-p device structure, low temperature processed SnO2 (< 150 °C) has been shown to provide high electron mobility and an optimal band edge alignment with perovskite absorber, which make it a superior candidate as electron transport layer for perovskite devices. Also, it was demonstrated that defect trap states at the SnO2/perovskite interface could be efficiently passivated by fullerene layers and therefore eliminate the hysteresis effect. However, the role of fullerenes is still obscure since they can be easily washed off by spin-coating the perovskite solution. In this study, planar n-i-p perovskite devices based on the structure of ITO/SnO2/FA0.66MA0.34PbI2.85Br0.15/Spiro-OMeTAD/Au are fabricated, where the SnO2/perovskite interface is modified by different fullerene films. By using X-ray photoelectron spectroscopy depth profiling, the impact of side-chain formula and thermal annealing on the chemical bonding between fullerene and SnO2 layers have been systematically investigated. After optimizing all the processing conditions, a stabilized efficiency of 17.9% can be achieved in perovskite solar cells.