Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV18)
Publication date: 21st February 2018
Lead halide materials have seen a recent surge of interest from the photovoltaics community following the observation of surprisingly high photovoltaic performance, with optoelectronic properties similar to GaAs. This begs the question: What is the limit for the efficiency of these materials? It has been known that under 1-sun illumination the efficiency limit of crystalline silicon is ∼29%, despite the Shockley–Queisser (SQ) limit for its bandgap being ∼33%: the discrepancy is due to strong Auger recombination. In this article, we show that methyl ammonium lead iodide (MAPbI3) likewise has a larger than expected Auger coefficient. Auger nonradiative recombination decreases the theoretical external luminescence efficiency to ∼95% at open-circuit conditions. The Auger penalty is much reduced at the operating point where the carrier density is less, producing an oddly high fill factor of ∼90.4%. This compensates the Auger penalty and leads to a power conversion efficiency of 30.5%, close to ideal for the MAPbI3 bandgap.
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