Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV18)
Publication date: 21st February 2018
PbI perovskite (PVK) solar cells have been intensively investigated because the PVK has the large absorption coefficient (> 104 cm-1) in the visible region and long carrier diffusion length (>1 mm). We have investigated planar type PVK solar cells consisted of ITO / NiOx / PVK / PCBM /Ag to produce the solar cells via lower temperature production processes. We have prepared radio-frequency (RF) sputtered NiOx films as hole transport layer because of the high stability under continuous illumination of solar light (1-2). We sputtered NiOx films by using NiO as the sputtering target. The property of NiOx films depends on the sputtering conditions such as Ar gas pressure, and the sputtering power. The sheet resistance of NiOx films decreases with decrease of Ar pressure. The transmittance also decreases in the visible and near-IR region. From XPS, the large amount of Ni3+ increases with decrease of Ar pressure. The short circuit current density of PVK solar cells decreases with decrease of Ar pressure because of low transmittance. The shunt resistance and VOC do not decrease. Therefore, the Ni3+ does not act as recombination center.
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