Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV18)
DOI: https://doi.org/10.29363/nanoge.hopv.2018.170
Publication date: 21st February 2018
Concerns about the health and environmental impacts of the use of lead in commercial devices have driven research into lead-free alternatives to lead halide perovskite semiconductors. Many of these materials which have shown promise involve bismuth halides, for example, MA3Bi2I9, BiOI, and Cs2AgBiBr6 [1,2]. Although they have been predicted to show similar defect tolerance to lead halides, and already display advantageous stabilities and long carrier lifetimes, the power conversion efficiencies of resulting devices have lagged behind the lead halides. The reasons for this may be a combination of the disconnected nature of the bismuth halide octahedra in the crystal structure, which limits carrier mobility, and the lower levels of absorption due to indirect bandgaps [3]. We probe the early-time excited states in many bismuth halide semiconductors using transient absorption, Raman and THz spectroscopy in order to reveal the crucial role of phonons in carrier transport and hot carrier cooling. Our findings are consistent with previous reports of strong coupling between phonons and electronic states [4]. Balancing the positive effect of carrier-phonon coupling, combined with the localisation of electronic states, to help span the indirect bandgap with their detrimental scattering effects provides an important design criterion for efficient next-generation solar cells.
[1] Hoye, R. L. Z. et al. Adv. Mater. 1702176, (2017).
[2] Slavney, A. H., Hu, T., Lindenberg, A. M. & Karunadasa, H. I., J. Am. Chem. Soc. 3, 3–6 (2016).
[3] Xiao, Z., Meng, W., Wang, J., Mitzi, D. B. & Yan, Y., Mater. Horiz. 4, 206–216 (2016).
[4] McCall, K. M., Stoumpos, C. C., Kostina, S. S., Kanatzidis, M. G. & Wessels, B. W., Chem. Mater. 9, acs.chemmater.7b01184 (2017).
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