Plasmonic Modified Graphene Oxide Interface Layer for Polymer Photovoltaic Devices
Suman K Pal a, Abhishek Gupta a, Abdus Salam Sarkar a, Chayan K Nandi a, Praveen C Ramamurthy b, Arun D Rao b
a School of Basic Sciences,Indian Institute of Technology Mandi, Mandi, H.P, 175001
b Department of Materials Engineering and Materials Research Center, Indian Institute of Science, Bangalore, Bangalore, Karnataka, 560012, India
International Conference on Hybrid and Organic Photovoltaics
Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV16)
Swansea, United Kingdom, 2016 June 29th - July 1st
Organizers: James Durrant, Henry Snaith and David Worsley
Poster, Abdus Salam Sarkar, 324
Publication date: 28th March 2016

Owing to their unique optical and electrical properties of graphene oxide (GO), which is a 2-D nanosheet of graphene, derivatized chemically with functional groups have been used as a new class of efficient interface material in organic optoelectronic devices. In such devices, efficient light trapping through the incorporation of metallic nanostructures (MNs) on the transport layer is a novel strategy. Here, we have systematically investigated the effect of gold nanoparticles (AuNPs) and nanorod (NR) as anode interface layer (AIL) on the devices in terms of optical properties, electrical properties and photovoltaic performance. We have fabricated the control devices with GO as an AIL for Poly ({4,8-bi's [(2-ethylhexyl) Oxy] benzo [1,2-b: 4,5-b′] dithiophene-2,6-diyl} {3-Fluoro-2-[(2-ethylhexyl) carbonyl] thieno [3,4-b] thiophenediyl}) (PTB7) and PC71BM based solar cells. The optimized power conversion efficiency (PCE) of the controlled device is found to be 4.27%. After incorporation of MNs in AIL, significant enhancement is observed in PCEs to 4.81%, 5.40% and 4.34% for AuNP1 (5nm), AuNP2 (20nm) and NR, respectively. Among the photovoltaic parameters of the AuNPs devices, the short circuit current density (Jsc) and open circuit voltage (Voc) for AuNP2 exhibit the largest improvement. The enhancement of Jsc could be attributed to the improved optical properties of the devices. The change of interfacial band alignment results into high Voc. Extraction of photogenerated charge carriers is more efficient in the plasmonic devices, which is reflected from the hike in fill factor (FF). Furthermore, a significant improvement of Jsc is observed due to enhanced light trapping in NRs based devices.



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