Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV16)
Publication date: 28th March 2016
Single crystal organic-inorganic lead halide perovskites have been shown to possess excellent charge transport properties with diffusion lengths of several microns and long lifetimes. Nevertheless, these properties have not been reproduced in perovskite thin films. Recombination at grain boundaries or additional bulk defects that form during the rapid crystallization of the films are two possible explanations for this discrepancy. Crystal size in perovskite thin films has thus far been limited to a few microns, and crystal quality has been inhibited by the need for rapid crystallization in order to achieve continuous layers of these materials. Here a method is demonstrated for reducing the crystallization rate to obtain continuous thin films of CH3NH3PbBr3 perovskites on various substrates with grain sizes up to 50 μm, as demonstrated by electron backscatter diffraction (EBSD) mapping. These grains show a diameter-thickness ratio up to 100:1 – the largest reported to date. The method also allows for excellent control over the grain size of the resulting films over two orders of magnitude with little change in processing conditions. Significant improvement in diffusion length and carrier lifetime can be achieved by increasing the grain size, indicating that trapping at grain boundaries plays an important role in limiting the electrical performance of these perovskite thin films. This method thus creates a potential pathway for producing thin films of perovskite semiconductors with electrical properties approaching those of single crystals.