Energetic and Recombination Kinetic Limitations in Hybrid Planar Perovskite Photovoltaics
Scot Wheeler a b, Daniel Bryant a c, James Durrant a c, Jenny Nelson b
a Department of Chemistry and Centre for Plastic Electronics, Imperial College London, South Kensington Campus, London, United Kingdom
b SPECIFIC, College of Engineering Swansea University, SPECIFIC, Baglan Bay Innovation Centre, Central Avenue, Baglan, Port Talbot, SA12 7AX, United Kingdom
International Conference on Hybrid and Organic Photovoltaics
Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV16)
Swansea, United Kingdom, 2016 June 29th - July 1st
Organizers: James Durrant, Henry Snaith and David Worsley
Oral, Scot Wheeler, presentation 165
Publication date: 28th March 2016

Perovskite photovoltaics have shown huge potential as a high efficiency, solution processed, thin film photovoltaic technology, with interest soaring over the last few years. There are currently multiple different device architectures with a wide range of photoactive material compositions, interlayers and processing conditions available. We focus our attention on the so called ‘Top Cat’ inverted architecture which is analogous to a conventional organic photovoltaic device, ITO/PEDOT:PSS/Active layer/ PCBM/Ca/Al. Understanding what limits performance, especially at open circuit, is important for further device development. 

Optoelectronic techniques such as transient photovoltage (TPV) and transient photocurrent (TPC) have been widely used to study the device performance of a range of thin film photovoltaic technologies, including DSSC and OPV. Differential charging is used to access the energetic position of the electron hole density of states, due to quasi-Fermi levels splitting as a result of charge accumulation. From TPV, the average charge carrier lifetime is seen to show a strong dependence on carrier density. From measurements of the ideality factor, we conclude surface recombination to be a key recombination pathway for this device architecture. The Br content of a CH3NH3Pb(I1-xBrx)3) perovskite active layer is studied as an example of how knowledge of both energetic and kinetic changes, not just the bandgap, are required to understand the final device VOC. Increasing the Br content to 20% increased the VOC by up to 170 mV. This increase in VOC was found to be primarily from an energetic increase in bandgap; however, this was somewhat limited by a competing increase in recombination rate; the device voltage was successfully reconstructed for a wide range of light intensities. Finally, we make comparisons with high performing organic materials for OPV applications, and find remarkable similarities in how recombination limits device performance. 



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