Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV16)
Publication date: 28th March 2016
In this contribution, we describe a new route for depositing of Cu2ZnSnS4 (CZTS) thin film via a single molecular precursor solution, focusing on the effect of dopants such as Sb and Na on device performance. Highly homogeneous CZTS films of 1.2 μm thickness are prepared by spin-coating of a single precursor solution containing metal chloride salts and thiourea onto Mo coated glass, followed by a sequence of annealing steps. X-ray diffraction and Raman spectroscopy confirm the presence of the kesterite phase, while Na and Sb dopants significantly improve film crystallinity. Elemental analysis establishes an excellent correlation between molecular precursor and film composition. A direct band gap of 1.4 eV is determined from optical measurements, whilst an increase in the photoluminescence yield with narrowing of the band-to-band peak is observed in the presence of the dopants. Thin-film devices were investigated with the configuration Mo/CZTS/CdS/i-ZnO/Al:ZnO/Ni-Al and an active area of 0.5 cm2. Analysis of over 70 cells for each composition shows that introduction of Na and Sb leads to an increase of the average power conversion efficiency from 3.2±0.5 to 5.2±0.3%. The best cell was obtained upon Na and Sb doping, featuring 14.9 mA cm‑2 short-circuit current, 610 mV open circuit voltage and 63% fill factor under AM 1.5 illumination (5.72% efficiency). We rationalise the increase in cell performance in terms of a decrease in structural disorder brought about by the interactions of Na and Sb with specific lattice sites of CZTS.