One Step Solution Processing of CuIn(S,Se)2 Thin Films
Devendra Tiwari a, Robert Harniman a, David Fermin a, Andrei Sarua b, Lan Wang c, Reiner Klenk c, Xianzhong Lin c, Tristan Koehler c
a School of Chemistry, University of Bristol, Cantocks Close, Bristol BS8 1TS, United Kingdom
b HH Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol, BS81TL, United Kingdom
International Conference on Hybrid and Organic Photovoltaics
Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV16)
Swansea, United Kingdom, 2016 June 29th - July 1st
Organizers: James Durrant, Henry Snaith and David Worsley
Poster, Devendra Tiwari, 132
Publication date: 28th March 2016

A single molecular precursor solution is described for the deposition of CuIn(S,Se)2 (CIS) film onto Mo coated glass substrates by spin coating followed by annealing in Se atmosphere. Characterization of the films by X-ray diffraction, Raman spectroscopy and scanning electron microscopy demonstrate the formation of a highly homogenous and compact layer 1.1 μm thick CIS with a MoSe2 under-layer. Atomic force microscopy reveals the presence spherical particles, with a fibrular overgrowth, ranging between 400-450 nm. Composition of films is found to be in close agreement with that of the precursor. Diffuse reflectance spectroscopy of the films indicate a direct band gap of 1.36 eV. The presence of electronic defects in the annealed materials were examined by low temperature photoluminescence spectroscopy.  Over 85 solar cell devices with the configuration Mo/CZTS/CdS/i-ZnO/Al:ZnO/Ni-Al and an active area of 0.5 cm2 were fabricated and tested. The champion cell shows a power efficiency of 3.36 % with an open circuit voltage of 520.84 mV and short circuit current of 13.92 mA/cm2 under AM 1.5 illumination. Overall variation in each of solar cell parameters remains below 10% of the average value, demonstrating the remarkable homogeneity of this solution processing method. External quantum efficiencies of above 60 % are observed for all the devices.   



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