In-Situ Monitoring of the Degradation of Perovskite Solar Cells under 68 MeV Proton Irradiation
Jörg Rappich a, Bernd Rech a, Norbert Nickel a, Viktor Brus a, Steve Albrecht a, Felix Lang a, Andrea Denker b, Sophie Seidel b, Jürgen Bundesmann b, Heinz Christoph Neitzert c, Giovanni Landi c
a Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Institut für Silizium Photovoltaik, Kekuléstr. 5, Berlin, Germany
b Salerno University, Dept. of Industrial Engineering (DIIn), Via Giovanni Paolo II 132, Fisciano (SA) 84084
International Conference on Hybrid and Organic Photovoltaics
Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV16)
Swansea, United Kingdom, 2016 June 29th - July 1st
Organizers: James Durrant, Henry Snaith and David Worsley
Oral, Felix Lang, presentation 111
Publication date: 28th March 2016

Thin film tandem solar cells, comprising of a perovskite top junction and a radiation hard CIGS bottom junction would be attractive for space applications since they can be lightweight, flexible and efficient. The ability to withstand the harsh radiation environment in space, consisting mainly of high energy protons however has to be proven for organic-inorganic perovskites. In-situ measurements of the short circuit current (JSC) during high energy proton irradiation at 68 MeV revealed the stability of solar cells based on CH3NH3PbI3, for the first time.[1] We found a total reduction in JSC of around 10 % for a proton dose of 1012 p/cm-2 and 50 % for a dose of 1013 p/cm-2. A commercial crystalline silicon photo-diode in comparison showed a total degradation of around 20 % at a dose of 1011 p/cm-2, already. Furthermore the observed degradation in perovskite solar cells is dominated by coloring of the used glass substrate and known absorber (photo-) instabilities. Taking these effects into account, the proton induced absorber degradation was calculated to a reduction of (1.4±2) % and (17±3) % only, at doses around 1012 and 1013 p/cm-2, respectively. The radiation hardness of CH3NH3PbI3 therefore is comparable to that of amorphous silicon. Surprisingly, the material not only possesses unexpected high proton radiation resistance – considering reported light[2], air [3] and thermal[3] instabilities –, but also self-healed after proton-irradiation. This process led to a significant recovering of the photovoltaic performance.

[1]         F. Lang, J. Bundesmann, S. Seidel, A. Denker, S. Albrecht, V. Brus, J. Rappich, N. Nickel, B. Rech, G. Landi, H. Neitzert, 2016, to be submitted.

[2]         G. Murugadoss, S. Tanaka, G. Mizuta, S. Kanaya, H. Nishino, T. Umeyama, H. Imahori, S. Ito, Jpn. J. Appl. Phys. 2015, 54, 08KF08.

[3]         X. Zhao, N.-G. Park, Photonics 2015, 2, 1139.



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