Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV16)
Publication date: 28th March 2016
The impressive performance of CH3NH3PbI3 perovskite semiconductors in photovoltaics would not be realized without the optimization of highly crystallized perovskite layers. A desirable perovskite thin film with minimal defects is preferred to have a full surface coverage, small surface roughness and a well-defined grain structure. Perovskite crystallinity, grain size and uniform coverage of the perovskite grains is crucial to achieving high performance and has been demonstrated using a 2-step, interdiffusion process. The fast reaction when spinning CH3NH3I solution onto PbI2 film, deposited from a DMF solution, may lead to non-uniform perovskite crystallization as well as epitaxial crystal growth and subsequently increased film roughness. For this purpose, it is often preferred to undertake the secondary step while the PbI2 film is still ‘wet’. This proves challenging for scale-up of the interdiffusion method, hence we incorporated an intermediate drying step to facilitate batch-to-batch processing. It can be observed from SEM images (Fig.1) that a rough film is formed through uncontrolled nucleation which occurs in the absence of DMF. By adding a small amount of polar and/or non-polar solvent, for example, DMF into CH3NH3I solution, the rate of perovskite crystallization will be influenced by the solubilizing capacity of the additive. By controlling the concentration of the compositional solvent, we are able to achieve a very smooth and pin-hole free perovskite film.
We have successfully applied solvent/anti-solvent additives in CH3NH3I solution to influence perovskite nucleation and growth. With the optimization of DMF ratio, we achieve a very smooth and pin-hole free perovskite film. With the comprehensive investigation of the perovskite surface and photovoltaic performance, a performance of 11.5% PCE (Voc to jsc) was obtained at DMF ratio of 1% with jsc = 19.2 mA/cm2, Voc = 970 mV, & fill factor (FF) of 0.62 for active cell areas no less than 0.3cm2. Hysteresis was observed in our devices, most likely a result of ineffective charge extraction at the interface between TiO2 and perovskite in this planar structure. Further investigation of the perovskite fabricating process and crystallizing mechanism is an ongoing research activity as applied to our aims of uniform, large-area deposition processes.In this study we investigated the perovskite film formation on compact TiO2 layers applying a modified interdiffusion method to improve crystallisation and film planarity. We used compositional mixes of solvent/anti-solvent additives in CH3NH3I solution to influence both film deposition kinetics and perovskite nucleation and growth.