Proceedings of International Conference on Hybrid and Organic Photovoltaics (HOPV16)
Publication date: 28th March 2016
Over the past few years, great improvement has been made in organic devices performances. Unfortunately, problems with their stabilities still persist, constraining the use of costly encapsulations.
In operating conditions, optoelectronic devices such as solar-cells, photo-transistors or photodiodes are exposed to many stresses: light, water, oxygen, temperature and electrical bias. These various factors lead to the deterioration of polymers used in devices. They induce many degradations and performances losses like decrease in photocurrent and increase in dark current or reducing the sensitivity of the device. Hence, unravelling the physics behind the degradation mechanism is needed. Most importantly, it is crucial to understand the role of each factor (such as oxygen, light, water) in degrading the performances of the devices.
In this work we aim to decorrelate the influence of the different stress effects by investigating the impact of environment and light on electrical characteristics of operating photodiodes, whose internal structure and materials are similar to organic solar cells. For this purpose, we present the behavior of a semi-transparent organic photodiode, in a simple case of a bias stress in the dark and in a water free oxygen environment. The competitive and multiplicative effects occurring in the case of various stresses are thus limited. In parallel, a measurement performed in a nitrogen environment is used as reference, allowing us to discriminate oxygen effect on the electrical characteristics of the devices. We show that even in the absence of light, oxygen induces irreversible damages to the device. It leads in particular to an increase of both the direct current and capacitance in the quasi-static regime in the dark. An asymmetry of the external quantum efficiency depending on the illumination side is also found. All these parameters changes that appear in the presence of oxygen are attributed to acceptors traps inducing either trapping of charges, or charge doping depending on the trap energetic level position in the bulk gap. This is also confirmed by theoretical simulations.
Thus this study highlights the irreversible impact of oxygen on the reliability of optoelectronics devices even in the absence of light.
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