The Synthesis and Morphological Characterization of NiO Nanomaterial for Dye Sensitized Solar Cells
Sule Erten Ela a
a Ege University Solar Energy Institute, Ege University Solar Energy Institute 35100 Bornova Izmir Turkey, Izmir, 35100, Turkey
International Conference on Hybrid and Organic Photovoltaics
Proceedings of International Conference on Hybrid and Organic Photovoltaics 2015 (HOPV15)
Roma, Italy, 2015 May 11th - 13th
Organizer: Filippo De Angelis
Poster, Sule Erten Ela, 437
Publication date: 5th February 2015
Dye-sensitized solar cell is a type of photoelectrochemical device proposed to replace conventional silicon-based photovoltaic devices. TiO2 nanoporous layer, dye molecule and hole conductor are the key components for the design and fabrication of solid-state dye solar cell.1 Dye-sensitized solar cells are produced at low cost from cheap starting materials, providing high solar to electric energy conversion efficiencies. Over the past decade, however, the efficiency improvements seen for DSSCs have been rather marginal, suggesting that more radical concepts might be required to achieve high conversion efficiencies.  Concepts originally developed and successfully applied in the area of conventional photovoltaics, such as  multi-junction or tandem solar cells for the development of high efficient DSSCs. Among these p-type transporting materials, NiO is a wide band-gap (Eg = 3.55 eV) oxide semiconductor with superior thermal and chemical stability,2 thus becomes a promising material in many applications such as transparent electrodes,3 electrochemical capacitors,4  electrochromic devices5 and photoelectrochemical devices.6 In this study, p-NiO is synthesized by hydrothermal technique using microwave oven. p-NiO is synthesized nickel acetate precursors. p-NiO material is characterized by Scanning Electron Microscopy and XRD analysis. NiO nanomaterial is important nanomaterial for p-type DSSC. Morphological and optical properties are discussed.

[1] Oregan, B.; Gra¨tzel, M. Nature 2004, 353, 737. [2] Bandara, J.; Yasomance, JP.; Semicond. Sci. Technol. 2007, 22, 20. [3] Sasi, B.; Gopchandran, KG.; Manoj, PK.; Koshy, P.; Rao, PP.; Vaidyan, VK.; Vacuum 2003, 68 149. [4] Xu, M.; Bao, S.; Li, H.; J. Solid State Electrochem. 2007, 11 372. [5] Park, JY.; Ahn, KS.; Nah, YC.; Shim, HS.; J. Sol–Gel Sci. Technol. 2004, 31, 323. [6] Aroutiounian, VM.; Arakelyan, VM.; Shahnazaryan, GE.; Sol. Energy, 2005, 78, 581.
© FUNDACIO DE LA COMUNITAT VALENCIANA SCITO
We use our own and third party cookies for analysing and measuring usage of our website to improve our services. If you continue browsing, we consider accepting its use. You can check our Cookies Policy in which you will also find how to configure your web browser for the use of cookies. More info