Application of ALD grown ZnO buffer layer to planar ALD grown Sb2S3 solar cells

Dae-Hwan Kim^a, Sang-Ju Lee^a, Dae-Kue Hwang^a, Shi-Joon Sung^a

^aDGIST, 50-1 Sang-Ri, Hyeonpung-Myeon, Dalseong-Gun,, Daegu, 711, Korea, Republic of

International Conference on Hybrid and Organic Photovoltaics
Proceedings of International Conference on Hybrid and Organic Photovoltaics 2015 (HOPV15)

Roma, Italy, 2015 May 11th - 13th

Organizer: Filippo De Angelis

Poster, Dae-Hwan Kim, 372
Publication date: 5th February 2015

ALD (atomic layer deposition) grown Sb₂S₃ thin film is very promising as a low-cost binary light absorber and we have reported an exemple of highly efficient planar ALD-Sb₂S₃ solar cells.¹ In this work, ALD-ZnO buffer layers were applied to planar Sb₂S₃solar cells. ZnO and Sb₂S₃were sequentially deposited on FTO substrate in an atomic layer deposition (ALD) system. Poly-3-hexylthiophene (P3HT), a hole conducting layer, was coated on the top of Sb₂S₃layer and finally Au electrode was deposited. Compared with a spin-coated ZnO, the ALD grown ZnO n-type buffer layer perfectly covered rough surface of F-doped SnO₂ (FTO) substrate and showed excellent thickness uniformity within the substrate. The FTO/ALD-ZnO/ALD-Sb₂S₃/Au devices showed improved power conversion efficiencies reaching up to 5.4% at 1 sun condition whereas the FTO/spin-coated-ZnO/ALD-Sb₂S₃/Au device showed 3.4% efficiency. The higher efficiency and good reproducibility of the ALD-ZnO/ALD-Sb₂S₃ solar cell devices is probably due to the conformal formation of thin ZnO film on the rough FTO surface.

Kim, D.-H.; Lee, S.-J.; Park, M. S.;, Kang, J.-K.; Heo, J. H.; Im, S. H.; Sung, S.-J. Highly reproducible planar Sb2S3-sensitized solar cells based on atomic layer deposition. Nanoscale 2014, 6, 14549-14554.

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