Electronic structure of Hybrid Organic Inorganic Perovskites Interfaces

Antoine Kahn^a

^aPrinceton University, Dept. Electrical Engineering, Princeton , 8540, United States

International Conference on Hybrid and Organic Photovoltaics
Proceedings of International Conference on Hybrid and Organic Photovoltaics 2015 (HOPV15)

Roma, Italy, 2015 May 11th - 13th

Organizer: Filippo De Angelis

Invited Speaker, Antoine Kahn, presentation 304
Publication date: 5th February 2015

Hybrid Organic Inorganic Perovskites (HOIP)have recently led to stunningly rapid progress on the photovoltaic scene. HOIP solar cells include key interfaces with organic and inorganic electron and hole transport layers (ETL, HTL), which must be carefully optimized in order to insure high efficiency devices. This talkfirst reviews our work on the determination of the electronic structure of HOIPs, specificallymethylammonium lead halides (MAPbX, X=Br₃, I₃, I_3-xCl_x) and tin halides, with evaluation of their valence and conduction band edges, ionization energy and electron affinity (IE, EA) [1].We then turn to HOIP interfaces, which play a key role for efficient electron and hole extraction. The electronic structure of several TiO₂/HOIP/organic HTL “conventional” cells, and NiO_x/HOIP/organic ETL “inverted” cells are given. Resultsput in evidence the role of interface energetics in terms of carrier loss-less extraction from, or confinement in, the perovskite layer [2]. The shift of the HOIP Fermi level from the top of the gap in TiO₂/HOIP to the lower half of the gap in NiO_x/HOIP [3] is discussed for its implications in terms of density of gap states in these materials. Finally, we discuss the damaging chemistry, whichtakes place at the interface between MAPbI₃ and the high work function HTL MoO₃, and its eventual mitigation with an ultra-thin organic buffer layer.

[1] P. Schulzet al., Energ. & Envir. Sci. 7, 1377 (2014) [2] E. Edri et al., J. Phys. Chem. Lett., 5, 429 (2014) [3] P. Schulz et al. (under review)

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