The optimization of open circuit voltage upon interface energetics in organic photovoltaic devices
Mats Fahlman a, Slawomir Braun a, Qinye Bao a, Xianjie Liu a
a Department of Physics, Chemistry and Biology, Linkoping University, 58183 Linkoping,
International Conference on Hybrid and Organic Photovoltaics
Proceedings of International Conference on Hybrid and Organic Photovoltaics 2015 (HOPV15)
Roma, Italy, 2015 May 11th - 13th
Organizer: Filippo De Angelis
Oral, Xianjie Liu, presentation 258
Publication date: 5th February 2015
To optimize and improve the efficiency of organic photovoltaic (OPV) devices such as polymer:fullerene bulk heterojunction (BHJ) solar cells to enable their successful commercialization, much attention has been paid to increase two photovoltaic parameters: short circuit current density (Jsc) and open circuit voltage (Voc). The upper limit of Voc in the device is the energy difference between the hole-transporting level of the donor and the electron-transporting level of the acceptor, which can be tuned by the synthesis of new polymers and/or new acceptor/fullerene derivatives to optimize donor-acceptor (D-A) energy level offsets. On the other hand, the photogenerated D-A charge transfer complexes have a significant influence on Voc.[1] However, strategies for Voc (and overall efficiency) improvement based on this effect are less explored. Here, we explore the effect of energy level alignment at the BHJ on device efficiency using a variety of experimental techniques and interface modeling, in which we focused on a series of regioregular-poly(3-hexylthiophene):fullerene BHJ OPV devices with pinned electrodes. It demonstrated that integer charge transfer states [2] present in the dark and created as a consequence of Fermi level equilibrium at BHJ have a profound effect on Voc [3]. The effective energy gap including possible potential steps at the BHJ that is the relevant parameter to the Voc upper limit. The integer charge transfer state formation causes vacuum level misalignment that yields a roughly constant effective donor ionization potential to acceptor electron affinity energy difference at the donor–acceptor interface, even though there is a large variation in electron affinity for the fullerene series. The large variation in Voc for the corresponding device series instead is found to be a consequence of trap-assisted recombination via integer charge transfer states. Furthermore, EPR measurements confirm the creation of integer charge transfer states at the BHJ in the dark and together with photo-induced absorption measurements which show that the D-A coupling strength and recombination-induced loss can be estimated using the so-called pinning energies. Based on the results, novel design rules for optimizing Voc of BHJ solar cells are proposed, and the design rules are tested against a series of high performing donor polymer: fullerene solar cell devices available in literature, and excellent correlation is obtained.

[1] K. Vandewal, et al. Nat. Mater.2014, 13, 64. [2] S. Braun, et al. Adv. Mater. 2009, 21, 1450. [3] Q. Y. Bao, et al. Adv. Funct. Mater. 2014, 24, 6309.
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