Lower dimensionality and lead-free perovskites: alternatives to CH3NH3PbI3 for photovoltaic and light emission applications
Pablo P. Boix a, Subodh G. Mhaisalkar a, Nripan Mathews a, Timothy White b, Tze Chien Sum c
a Energy Research Institute @ NTU (ERI@N), Research Technoplaza, Nanyang Technological University, Singapore, Nanyang Drive, Singapore, Singapore
b MSE, Nanyang Technological University, Nanyang Avenue, Singapore 639798
c SPMS, Nanyang Technological University, 21 Nanyang Link, Singapore 637371
International Conference on Hybrid and Organic Photovoltaics
Proceedings of International Conference on Hybrid and Organic Photovoltaics 2015 (HOPV15)
Roma, Italy, 2015 May 11th - 13th
Organizer: Filippo De Angelis
Oral, Nripan Mathews, presentation 175
Publication date: 5th February 2015
The excellent electronic properties of CH3NH3PbI3, especially the balanced electron and hole diffusion lengths1, have situated this material in the forefront of solution processed photovoltaics, as well as an excellent candidate for light emission2 and lasing applications3. Efficiencies higher than 20% have been achieved through incremental improvements of the perovskite solar cell performances, mainly by means of the development of new device architectures and the use of innovative fabrication processes. Although these strategies have had great successes, it is essential to expand the family with new materials which can match the advantages of CH3NH3PbI3 and simultaneously solve some of its drawbacks, such as low moisture stability and toxicity. The perovskite family offers rich multitudes of crystal structures and substituents with the potential to uncover new and exciting photophysical phenomena that hold the promise of higher solar cell efficiencies,the search for Pb-free perovskites have naturally shifted to other transition metal cations and formulations that replace the organic moiety. We present an approach which opens new routes to the design of alternative perovskites. Lower dimensionality and lead-free perovskites, including Cu and Sn-based (Figure 1), are analyzed in different systems, examining their promising behavior and elucidating their limitations.
Band gap variation of CsSnI3-xBrx w.r.t Br- concentration. The inset shows the photographs of samples - CsSnI3, CsSnI2Br, CsSnIBr2 and CsSnBr3 from left to right
1. G. Xing, N. Mathews, S. Sun, S. S. Lim, Y. M. Lam, M. Gratzel, S. Mhaisalkar and T. C. Sum, Science, 2013, 342, 344-347. 2. Z.-K. Tan, R. S. Moghaddam, M. L. Lai, P. Docampo, R. Higler, F. Deschler, M. Price, A. Sadhanala, L. M. Pazos, D. Credgington, F. Hanusch, T. Bein, H. J. Snaith and R. H. Friend, Nature Nanotechnology, 2014, 1-6. 3. G. Xing, N. Mathews, S. S. Lim, N. Yantara, X. Liu, D. Sabba, M. Grätzel, S. Mhaisalkar and T. C. Sum, Nature materials, 2014, 13, 476-480.
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