nanoGe - HOPV15 - Atomic Layer Deposition Grown p - NiO Films as Hole Transport Layer for Highly Efficient Perovskite Solar Cells

Atomic Layer Deposition Grown p - NiO Films as Hole Transport Layer for Highly Efficient Perovskite Solar Cells

Seulky Lim^a, Seongrok Seo^a, Sunhee Lee^a, Hyunjung Shin^a, Myungjun Kim^a, Changdeuck Bae^a, Jooho Moon^b, Hyeok-Chan Kwon^b, Hyunsuk Jung^c

^aDepartment of Energy Science, Sungkyunkwan University, Suwon, 440-746, Korea, Republic of

^bDepartment of Materials Science and Engineering, University of California, Los Angeles, California 90095, United States

^cDepartment of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 440-746, Korea, Republic of

International Conference on Hybrid and Organic Photovoltaics
Proceedings of International Conference on Hybrid and Organic Photovoltaics 2015 (HOPV15)

Roma, Italy, 2015 May 11th - 13th

Organizer: Filippo De Angelis

Oral, Hyunjung Shin, presentation 164
Publication date: 5th February 2015

NiO is known to be wide band gap p-type oxide semiconductor and potential applications in solar energy conversion as a hole-transporting layer. It has good optical transparency, high chemical stability and possibility of band edge aligning with the perovskite (CH₃NH₃PbI₃) layer for minimum energy loss. In this work, NiO films on F:SnO₂ (FTO) – coated glass were synthesized by atomic layer deposition (ALD) technique with ultra-precisely controlled thickness. Pin-hole free ultra-thin NiO films (< 10 nm) ensure low series resistance while blocking electron transport effectively. Electrochemical Mott – Schottky analysis were carried out for the measurement of acceptor concentration (~ 7.0 x 10¹⁸cm^-3), flat band potential (5.47 eV), and valence band edge (5.5 eV). Determined work functions of NiO films from Mott – Schottky analysis showed good agreement with the work function (~ 5.46 eV) measured by Kelvin probe force microscopy (KFM), which the values are energetically favorable for perovskite solar cells. Rectifying n-TiO₂/p-NiO heterojunction diodes were also fabricated and characterized with different thicknesses (10, 20, and 40 nm) of NiO films. The fabricated heterojunction diodes with 10 nm thick NiO films showed better rectifying behavior. Finally, FTO/p-NiO/perovskite (CH₃NH₃PbI₃)/PCBM/Ag photovoltaic cells were fabricated and investigated. High open circuit voltages with the minimum energy loss of the thickness optimized hole-transporting layer have been obtained.

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