Improving the stability and limiting the recombination of planar perovskite PV cells by interfacial engineering
Neeti Tripathi a, Kenjiro Miyano a, Masatoshi Yanagida a b, Yasuhiro Shirai a b, Liyuan Han b
a National Institute of Material Science (NIMS), JAPAN, National Institute of Material Science (NIMS), Organic/ Inorganic hybrid photovoltaic group, 1-1 Namiki, Tsukuba, Ibaraki, Tsukuba, 3050044
b National Institute of Material Science (NIMS), JAPAN, National Institute of Material Science (NIMS), Organic/ Inorganic hybrid photovoltaic group, 1-1 Namiki, Tsukuba, Ibaraki, Tsukuba, 3050044
International Conference on Hybrid and Organic Photovoltaics
Proceedings of International Conference on Hybrid and Organic Photovoltaics 2015 (HOPV15)
Roma, Italy, 2015 May 11th - 13th
Organizer: Filippo De Angelis
Poster, Neeti Tripathi, 123
Publication date: 5th February 2015
A rapid advancement in hybrid-perovskite solar cells (PSCs) have shown tremendous potential to solve the energy problems, owing to the advantages of spectacular opto-electronic properties, low cost and easy processing methodologies. Though, conventional DSSC type has been the most acceptable architecture to produce the high efficiency devices, an inverted structure similar to those employed in polymer solar cell is capable of producing devices with non-hysteretic I-V characteristics. In a typical configuration, an inverted structureconsists of PEDOT:PSS as a hole transporting layer, perovskite as a light absorber and  PCBM as an electron transporting layer. Though, recent updates demonstrated the convincing performance in inverted type solar cell, corrosive and hygroscopic nature of PEDOT:PSS causes a sever chemical instability and non-uniform charge extraction at  PEDOT:PSS/perovskite interface, thus limiting the device performance and stability. Here, we examine the effect of an additional hole selective/electron blocking layer on the photovoltaic performance and stability of planar structured perovskite solar devices with configuration ITO/PEDOT:PSS/Perovskite/PCBM/Ag. An ultra-thin layer of conjugated polymer is employed between the PEDOT:PSS and perovskite layer and a detailed study on the structural properties of perovskite layer, device performance and stability are discussed. Structural investigations suggest that, an additional layer of conjugated amine polymer helps in controlling the growth of perovskite crystals by preventing the crystallization of PbI2. Moreover, retardation of charge recombination at PEDOT:PSS/perovskite interface leads to the PCE > 12% with reproducibility over 85%. To probe the kinetics of recombination, a light intensity dependent current-voltage characteristics were recorded for devices with and without the additional hole selecting layer and results are explained using the ideal diode equation.  Our results provide an important progress in solution processed inverted perovskite solar devices, and demonstrated highly stable performance over the period of several months.

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