Opto-electrical investigations of influence of electron extracting interface layers in bulk-heterojunction solar cells
Cheng Li a, Christian Müller a, Sven Hüttner a, Mukundan Thelakkat a, Chetan Raj Singh a
a University of Bayreuth, Germany, Universitätsstraße, 30, Bayreuth, Germany
International Conference on Hybrid and Organic Photovoltaics
Proceedings of International Conference on Hybrid and Organic Photovoltaics 2015 (HOPV15)
Roma, Italy, 2015 May 11th - 13th
Organizer: Filippo De Angelis
Poster, Chetan Raj Singh, 111
Publication date: 5th February 2015
The introduction of interface layers at the interfaces of the photoactive layer with the charge-collecting electrodes in bulk-heterojunction solar cells has become an important criterion to maximize the solar cell performance. An ideal interface layer should form the ohmic contact with active layer, offer high charge selectivity, and absorb minimal light from the solar spectrum. Here the influence of different types of electron extracting layers including calcium (Ca), zirconium acetylacetonate (ZrAcac), and a polyfluorene derivative (PFN) is investigated on the performance of P3HT:PC61BM and PDPP:PC71BM bulk-heterojuntion solar cells. The opto-electrical properties of the layers are investigated in combinatorial involving electroabsorption measurements [1] for the built-in field determination, and transfer matrix simulation [2] for the determination of parasitic absorption in interface layers. It is concluded that not only the low work function and high charge selectivity of the interface ..


(a) Schematic of the bulk-heterojunction solar cells, in which photoactive layers are sandwiched between the PEDOT:PSS coated ITO anode and the interface layers, capped by Al cathode. (b) Current density versus voltage (J-V) characteristics under 1000 Wm-2 AM 1.5G illumination of PDPP:PC71BM solar cells for different cathode interlayers.
[1] Malliaras, G. G.; Salem,J. R.; Brock, P. J.; and Scott, J. C. J. Appl. Phys., 1998, 84, 3. [2] Burkhard,G.; Hoke,E. T.; and McGehee,M. D. Adv. Mat. 2010, 22, 3293-3297.
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