Improving carrier diffusion length in solution-processed photovoltaic materials
Ted Sargent a, David Zhitomirsky a, Valerio Adinolfi a, Riccardo Comin a, Graham Carey a, Amirreza Kiani a, Oleksandr Voznyy a
a University of Toronto, King's College Road, 10, Toronto, Canada
International Conference on Hybrid and Organic Photovoltaics
Proceedings of International Conference on Hybrid and Organic Photovoltaics 2015 (HOPV15)
Roma, Italy, 2015 May 11th - 13th
Organizer: Filippo De Angelis
Oral, Oleksandr Voznyy, presentation 102
Publication date: 5th February 2015

Thin-film solution-processable materials are attractive for efficient and low-cost implementation of photovoltaic and other optoelectronic devices. The figure of merit that characterizes the relevant material transport properties is the charge carrier diffusion length which, in general, depends on the mobility and recombination lifetime. In the Shockley-Read-Hall recombination regime, however, the lifetime becomes inversely proportional to mobility, rendering diffusion length mobility-invariant and determined solely by the density of deep traps.

Photoluminescence-based techniques were successfully employed to measure diffusion lengths on the order of 80 nm for colloidal quantum dot films and exceeding 1 um for lead halide perovskites. An effective trap density can be extracted from diffusion length, however, the exact amount of traps, their capture cross-section and depth, and thus the origin of traps, remain unknown, providing no input for further optimization of the material.

This work focuses on the temperature dependence of the diffusion length, measured using J-V characteristics and photoluminescence lifetime. We find diffusion lengths decreasing significantly at lower temperatures and explain this with shallow (~ 0.1 eV) nature of traps. Comparing different quantum dot and perovskite processing techniques we delineate whether recent advances in photovoltaic performance were achieved due to reduced trap densities vs. trap depths.

Obtained results suggest that in the shallow trap regime, improved mobility can enhance the carrier escape rate from traps and thus improve the diffusion length. Using DFT simulations, we have studied the factors affecting the inter-dot coupling in quantum dot films and propose several chemical routes to improving mobility for both electrons and holes. Our new experimental results demonstrate four-fold improvement of diffusion length in colloidal quantum dot films, achieving record-high short-circuit currents in solution-processed thin-film photovoltaics.


Measured and simulated temperature dependence of short-circuit current for different trap depths.
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