Hybrid Organic-Inorganic Interfaces for Improved Performance in Nanostructured Solar Cells
a Uppsala University, Sweden, Uppsala, Sweden
International Conference on Hybrid and Organic Photovoltaics
Proceedings of International Conference on Hybrid and Organic Photovoltaics 2015 (HOPV15)
Proceedings of International Conference on Hybrid and Organic Photovoltaics 2015 (HOPV15)
Roma, Italy, 2015 May 11th - 13th
Organizer: Filippo De Angelis
Poster, Erik M. J. Johansson, 083
Publication date: 5th February 2015
Publication date: 5th February 2015
Colloidal quantum dots (QDs) are interesting for the application in photoelectrical devices, such as photodetectors and photovoltaic devices due to their size-dependent optical, electronic, and optoelectronic properties. For a typical heterojunction QD solar cell, a QD film is prepared on a n-type semiconductor oxide layer. An inorganic interlayer, such as for example MoO3, CuI, CdS, LiF incorporated between the QD film and the top metal contact has previously been shown to improve the performance of the solar cell.
Here we present a organic-inorganic hybrid p-i-n heterojunction PbS QD solid solar cell, which is constructed using an organic p-type material as hole transport material (HTM) between the PbS QD film and the top metal electrode. TiO2 or ZnO is utilized as the n-type material. Three different organic HTMs: 2,2’,7,7’-tetrakis(N,N-di-p-methoxyphenilamine)-9,9’-spirobifluorene (Spiro-OMeTAD), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA) and poly(3-hexylthiophene-2,5-diyl) (P3HT), are investigated as organic HTM (p-type) layers. These HTMs have slightly different energy levels, which affects the charge extraction of the devices. The P3HT HTM in this case result in the best device performance and the results are explained by the energy level alignment at the interface between the QD layer and the HTM. Also,a depletion region may be formed at the p-i junction for P3HT/QDs, which is advantageous compared to a direct QD/metal interface. Moreover, the P3HT interlayer also decrease the possibility of charge recombination at the QDs/metal interface resulting in enhanced open-circuit voltage (Voc), fill factor (FF), electron lifetime (τe) and hence improved power conversion efficiency.
The effect of different organic hole transport materials between the contact metal and a perovskite layer in combination with nanoparticles of TiO2 is also investigated. Comparing different organic HTMs, it is shown that the device with spiro-OMeTAD HTM has best performance and the result is explained by a slow recombination reaction between the photogenerated electrons and holes in the device.
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