Proceedings of International Conference on Hybrid and Organic Photovoltaics 2015 (HOPV15)
Publication date: 5th February 2015
The past several years has witnessed a surge of interest in organometallic trihalide perovskites, which are at the heart of the new generation of solid-state solar cells. Using the phenomenological Landau-Ginzburg-Devonshire (LGD) theory, we calculated the static conductance of charged domain walls with different incline angles with respect to the spontaneous polarization vector in n- and p- doped semiconductor perovskite CH3NH3PbI3. In this material, ferroelectric domains were observed directly using piezoforce microscopy [1]. Also, this organometallic trihalide perovskite is the best studied among other similar materials, and the existing set of its measured and/or calculated parameters is sufficient to parametrize the LGD theory based model. We found that due to the charge carrier accumulation, the static conductance may drastically increase at the domain wall (by 3 – 4 orders of magnitude) in comparison with conductance through the bulk of the material. Also, a two-dimensional degenerated charge carrier gas could be formed at the wall, and the charge carrier mobility at the domain walls in CH3NH3PbI3 could be very high and comparable to that in the best grown state-of-art semiconductor heterostructures. The value of the conductance along the wall depends on several factors including the type of doping, concentration of dopants, domain sizes, and incline angles. The high values of conductance at domain walls may explain high efficiency in organometallic solution-processed perovskite films which contains lots of different point and extended defects. These investigations could provide new insights into the fundamental photovoltaic mechanisms for perovskite-based solar cells and suggest new routes to enhance the performance of this promising class of novel photovoltaic materials.
1. Kutes, Y. et al. Direct observation of ferroelectric domains in solution-processed CH3NH3PbI3 perovskite thin films. J. Phys. Chem. Lett. 2014, 5, 3335-3339.
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