Crystal Size Dependent Charge Carrier Mobility of CH3NH3PbI3 Perovskite Solar Cells
Nam-Gyu Park a, Jeong-Hyeok Im a, In-Hyuk Jang a
a Sungkyunkwan University, South Korea, 300 Cheoncheon-dong, Jangan-gu, Suwon, 440, Korea, Republic of
International Conference on Hybrid and Organic Photovoltaics
Proceedings of 6th International Conference on Hybrid and Organic Photovoltaics (HOPV14)
Ecublens, Switzerland, 2014 May 11th - 14th
Organizers: Michael Graetzel and Mohammad Nazeeruddin
Poster, In-Hyuk Jang, 272
Publication date: 1st March 2014

We have investigated effect of CH3NH3PbI3 crystal size on hole mobility in CH3NH3PbI3 perovskite solar cells. CH3NH3PbI3 perovskite layer was prepared by two-step spin-coating method, where PbI2 was first spin-coated and then CH3NH3I was spin-coated. Crystal size of CH3NH3PbI3 was found to be significantly dependent on concentration of CH3NH3I, in which crystal size of CH3NH3PbI3 was exponentially decreased with increasing concentration of CH3NH3I. Crystal size was about 360 nm for 44 mM CH3NH3I, whereas smaller size of 90 nm was obtained from higher concentration of 63 mM. Photocurrent was decreased from 19.2 mA/cm2 to 18.6 mA/cm2 with increasing concentration of CH3NH3I from 44 mM to 63 mM. Although photovoltage was slightly increased 1060 mV to 1090 mV, power conversion efficiency was decreased from 14.2% to 13.4% mainly due to decrease in photocurrent with concentration of CH3NH3I. Hole mobilities were measured by photocurrent time-of-flight method. The zero-field hole mobilities were estimated to be ~6.610-3 cm2 V-1 s-1 for 44 mM to ~2.610-3 cm2 V-1 s-1 for 63 mM CH3NH3I. Since mobility in grain and mobility in boundary contribute to total hole mobility of CH3NH3PbI3 layer, larger hole mobility in low concentration of CH3NH3I is attributed to larger grain and smaller boundary. Since the tendency of hole mobility is consistent with the tendency of photocurrent, change in photocurrent with concentration of CH3NH3I correlates with hole mobility of CH3NH3PbI3.



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