Proceedings of 6th International Conference on Hybrid and Organic Photovoltaics (HOPV14)
Publication date: 1st March 2014
Hybrid organic-inorganic perovskite halides (AMX3, A, B: organic, metal cation, X-halide) have created a new excitement in the photovoltaic community. Their excellent optical and electrical characteristics as well as high crystallinity and low defect densities have resulted in solar cell efficiencies reaching over 16% in 18 months (currently the most efficient solution processed/3rd generation photovoltaic technology), with 20% a challenging but reasonable objective. Additionally these materials have demonstrated a huge potential for a wide variety of electronics applications, such as light emission (Figure 1a).
However, some basic mechanisms are still under discussion. Here we present a complete study of CH3NH3PbI3 where we analyze the structural characteristics as well as its physical properties which determine both photovoltaic and light emission performances. We report long charge carrier diffusion lengths (Figure 1b) measured by femtosecond transient optical spectroscopy, which are enabled by the high degree of crystallinity of the material even in solution processed samples. The excellent electrical properties are exploited in photovoltaic devices based on different electron transporting materials such as electrospun nanofibers and ZnO nanorods, which allow the fabrication of efficient flexible solar cells. In addition, the use of different organic hole transporting materials facilitates the investigation of the interfacial processes which control the cell behavior.
The potential of this kind of materials in light emission application is supported by CH3NH3PbX3 , (X=Cl, Br, I) displaying ultra-stable amplified spontaneous emission at strikingly low thresholds due to their large absorption coefficients, ultralow bulk defect densities and slow Auger recombination. All in all, we present a broad approach to develop a robust semiconductor technology based in perovskites.
Figure 1. (a) PL spectrum at 10 K – where the dotted lines are the deconvolved Gaussian peaks. The dashed lines in the false color temperature-dependent PL map show the evolution of the emission peaks with temperature. (b) Exciton diffusion length versus PL lifetime quenching ratios. Diffusion length is scaled in multiples of CH3NH3PbI3 layer thickness (L = 65 nm)
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