Growth of Gold onto Semiconductor Ternary and Quaternary Nanorods to Form Metal-Semiconductor Hybrids
Kevin M. Ryan a, Claudia Coughlan a, Pai Liu a, Shalini Singh a, Jianjun Wang a, Louise Barry a
a Department of Chemical and Environmental Sciences, Material and Surface Science Institute, University of Limerick, Castletroy, Limerick, 0, Ireland
Poster, Louise Barry, 054
Publication date: 27th June 2014

In this study we have achieved gold growth on ternary and quaternary copper chalcogenide nanorods (Cu2ZnSnS4, CuIn1-xGaxS2 and Cu2SnS3) and on ternary alloyed cadmium chalcogenide NRs (CdSexS1-x NRs).  Nanorods (NRs) benefit from length dependent properties such as stronger dipole moments, linearly polarized emission along the c-axis, and enhanced light absorption.  Also, compositional tunability in ternary and quaternary semiconductors allows modulation of the band gap as a function of the cation or anion ratios [1-3].  The growth of a metal onto semiconductor NRs is an important integration step for device applications including nanoelectronics, photocatalysis, photovoltaics and biosensing [4-6]. Two methods were employed to grow gold onto the NRs. The first method involved the reduction of a metal onto the nanorods directly in the organic phase using surfactants [7, 8]. The second method involved phase transferring the metal ions from the aqueous phase to the organic phase where they were reduced onto the dispersed NRs [9]. We studied the effect of various growth conditions including valency of gold in the precursors, gold concentration, organic solvents and growth time and temperatures.  In this study we have successfully yielded multiple gold tip growth on the NRs using both gold growth methods. Transmission electron microscopy was used to determine the shape of the as synthesized NRs and the size and position of the gold tips. X-Ray diffraction was used to determine the structure of the NRs.

References:

1. Singh, A.; Geaney, H.; Laffir, F.; Ryan, K.M., J. Am. Chem. Soc., 2012, 134, 2910-2913

2. Singh, A.; Coughlan, C.; Laffir, F.; Ryan, K.M., ACS Nano., 2012, 6, 6977-6983

3. Singh, S.; Singh, A.; Palaniappan; Ryan K.M.,  Chem. Comm., 2013, 49, 10293-10295

4. Sheldon, M.T.; Trudeau, P.-E.; Mokari, t.; Alivastos, A.P., Nano Lett., 2009, 9, 3676-3682

5. Costi, R.; Sanders, A. E.; Banin, U., Nano Lett., 2008, 8, 637-644

6. Liu, J.; Lu, Y., J. Am. Chem. Soc., 2003, 125, 6642-6643

7. O’ Sullivan, C.; Ahmed, A.; Ryan, K.M., J Mater. Chem., 2008, 18, 5218-5222

8. O’ Sullivan, C.; Gunning, R. D.; Barrett, C.A.; Singh, S.; Ryan, K. M., J. Mater. Chem., 2010, 20, 7875-7880

9. Bala, T.; Singh, A.; O’ Sullivan, C.; Laffir, F.; Coughlan, C.; Ryan, K.M., Nano Research, 2013, 6, 121-130



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