Tuning electron transfer rates in QD-bridge-oxide systems
Erik McNellis a, Mischa Bonn a, Enrique Canovas a, Hai Wang a b
a Max Planck Institute for Polymer Research, Mainz, Ackermannweg, 10, Mainz, Germany
b Graduate School Material Science in Mainz, University of Mainz, Staudingerweg, 9, Mainz, Germany
Oral, Enrique Canovas, presentation 022
Publication date: 27th June 2014

We quantify the rate and efficiency of picosecond electron transfer (ET) between quantum dots (QDs) and oxides as a function of QD-oxide coupling strength in QD–molecular linker–oxide systems. The electronic coupling is controlled through the nature and length of the molecular linker anchoring the QD donor to the oxide acceptor; optical pump-Terahertz probe spectroscopy is used to follow ET. Electron transfer rates are surveyed for two types of bridges based on n-methylene and n-phenylene moieties respectively. For both linkers, temperature independent-ET rates are found to decrease exponentially with molecular length, indicating that ET through the linker occurs as a tunnelling process characterized by decay factors ~0.85 Å-1 and ~0.29 Å-1, for aliphatic and aromatic bridges, respectively. These numbers imply larger barrier potentials for ET through aliphatic than aromatic linkers, and are in quantitative agreement with previous reports based on conductance measurements through single molecule junctions.

 

 

 

Reference “Tuning Electron Transfer Rates through Molecular Bridges in Quantum Dot Sensitized Oxides” Hai Wang, Erik R. McNellis, Sachin Kinge, Mischa Bonn, and Enrique Cánovas, Nano Lett., 2013, 13 (11), pp 5311–5315.



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