Effect of nanostructured TiO2 morphology on electronic structure studied by the photoacoustic, photoluminescence, and photoelectron yield spectroscopy
Witoon Yindeesuk a, Tsuyoshi Okuno a, Qing Shen a b, Taro Toyoda a b, Shuzi Hayase b d, Keita Kamiyama c
a The University of Electro-Communications, Japan, Japan
b CREST, Japan Science and Technology (jST), Kawaguchi, Saitama 332-0012
c Bunkoukeiki, Co., Ltd., Hachioji, Tokyo 192-0033
d Kyushu Institute of Technology, Japan, 204 Hibikino Wakamatsu-ku, Kitakyushu - Fukuoka, 808, Japan
Oral, Taro Toyoda, presentation 015
Publication date: 27th June 2014

   TiO2 is used in the numerous applications sensitized-solar-cells. A main factor for the photovoltaic performance is the morphology of TiO2 electrode for sensitizer assembly [1]. Nanoparticulate (NP)-TiO2 electrodes have been used for sensitized-solar-cells. NP-electrode has high surface area to increase the loading of sensitizers. However, the recombination process is proportional to the electrode surface area. A balance between recombination and light harvesting is needed to maximize solar cell performance. TiO2 electrodes with a higher degree of order than NP-electrodes are desirable for higher conversion efficiency. An approach has been proposed using an inverse opal (IO)-TiO2. There are several reports showing higher conversion efficiency in IO-case (mainly increase of open circuit voltage, Voc) than that in NP-case [2.3]. However, the key factors that determine the enhancement of conversion efficiency of IO-case still remain unclear. The fundamental studies of comparison of electronic structures in IO- and NP-TiO2 is lacking. Photoacoustic (PA) spectroscopy is used for the optical absorption. Photoluminescence (PL) spectroscopy is used for defect state characterization. In addition to those measurements, photoelectron yield (PY) spectroscopy was applied to characterize the valence band maximum (VBM) position which is correlated with the conversion efficiency. Band gap value of IO-TiO2 agrees with that of NP-TiO2 (~ 3.2 eV) by PA measurements in good agreement with that of anatase TiO2. Above the band gap region, the slope of exponential absorption in IO-TiO2 is larger than that in NP-TiO2, indicating the larger state density of IO-case than that of NP-case in the conduction band. The surface oxygen vacancies and bulk oxygen vacancies in IO-TiO2 are lower than those in NP-TiO2 from the PA measurements. PL measurements show that the self-trapped-exciton emission is dominant in IO-TiO2, contrary to dominant emission from oxygen vacancy states in NP-TiO2. The positions of VBM measured for IO- and NP-TiO2 were -7.38 and -7.52 eV, respectively. The position of VBM of IO-TiO2 is higher than that of NP-TiO2, indicating the possibility of increase in Voc in sensitized-solar-cells [1]. 

[1] T. Toyoda and Q. Shen, J. Phys. Chem. Lett. 3, 1885 (2012).

[2] L. Diguna, Q. Shen, J. Kobayashi, and T. Toyoda, Appl. Phys. Lett. 91, 023116 (2007).

[3] H.-N. Kim and J.-H. Moon, Curr. Appl. Phys. 13, 841 (2013).  



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