Publication date: 13th July 2024
Indium arsenide (InAs) colloidal quantum dots (CQDs) have recently attracted significant attention due to their excellent optoelectronic properties in short-wave infrared (SWIR), resulting in the fabrication of highly efficient optoelectronic devices, such as solar cells, lasers and photodetectors. Nowadays, most CQD optoelectronic devices in SWIR are based on toxic lead and mercury chalcogenides, with limited integration into the market. On the other hand, III-V semiconductor CQDs are promising candidates to complement this gap, such as InAs CQDs, which are classified as RoHS-compliant material (“Restriction of Hazardous Substances”). Nevertheless, the applications of InAs CQDs are hindered by their low photoluminescence quantum yield (PLQY) due to the intrinsic surface dangling bonds and surface trap states. To address this challenge, new synthetic approaches have recently been proposed, reaching PLQYs above 40% with the epitaxial growth of thin ZnSe shell1. Therefore, here we synthesized and studied a series of InAs/ZnSexS1-x core/shell CQDs with thin alloyed shells, aiming to further confine the carriers and reduce the Auger rates in the system. Hence, we introduce an optimized seeded-growth synthesis of InAs/ZnSexS1-x CQDs reaching PLQYs up to 70%, with high crystallinity despite the large lattice mismatch. Finally, we studied the optoelectronic response of core/shell series in both single and multi-excitonic levels, showing further suppression of the Auger rates.