Seeded-Growth Synthesis of InAs/ZnSexSx-1 Colloidal Quantum Dots
Nefeli Polykarpou a, Eleftheria Charalambous a b, Manuela De Franco c, Rossaria Brescia d, Dong Zhu e, Luca De Trizio e, Andreas Othonos f, Francesco Di Stasio c, Grigorios Itskos b, Sotirios Christodoulou a
a Inorganic Nanocrystals Laboratory, Department of Chemistry, University of Cyprus, Nicosia 1678, Cyprus
b Experimental Condensed Matter Physics Laboratory, Department of Physics, University of Cyprus, Nicosia 1678, Cyprus
c Photonic Nanomaterials, Istituto Italiano di Tecnologia, Via Morego 30, Genova 16163, Italy
d Nanochemistry Department, Istituto Italiano di Tecnologia, Via Morego 30, Genova 16163, Italy
e Nanochemistry, Istituto Italiano di Tecnologia, 16163 Genova, Italy
f Laboratory of Ultrafast Science, Department of Physics, University of Cyprus, Nicosia 1678, Cyrpus
Proceedings of Emerging Light Emitting Materials 2024 (EMLEM24)
La Canea, Greece, 2024 October 16th - 18th
Organizers: Grigorios Itskos, Sohee Jeong and Jacky Even
Poster, Nefeli Polykarpou, 052
Publication date: 13th July 2024

Indium arsenide (InAs) colloidal quantum dots (CQDs) have recently attracted significant attention due to their excellent optoelectronic properties in short-wave infrared (SWIR), resulting in the fabrication of highly efficient optoelectronic devices, such as solar cells, lasers and photodetectors. Nowadays, most CQD optoelectronic devices in SWIR are based on toxic lead and mercury chalcogenides, with limited integration into the market. On the other hand, III-V semiconductor CQDs are promising candidates to complement this gap, such as InAs CQDs, which are classified as RoHS-compliant material (“Restriction of Hazardous Substances”). Nevertheless, the applications of InAs CQDs are hindered by their low photoluminescence quantum yield (PLQY) due to the intrinsic surface dangling bonds and surface trap states. To address this challenge, new synthetic approaches have recently been proposed, reaching PLQYs above 40% with the epitaxial growth of thin ZnSe shell1. Therefore, here we synthesized and studied a series of InAs/ZnSexS1-x core/shell CQDs with thin alloyed shells, aiming to further confine the carriers and reduce the Auger rates in the system. Hence, we introduce an optimized seeded-growth synthesis of InAs/ZnSexS1-x CQDs reaching PLQYs up to 70%, with high crystallinity despite the large lattice mismatch. Finally, we studied the optoelectronic response of core/shell series in both single and multi-excitonic levels, showing further suppression of the Auger rates.

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