Short-wave infrared optoelectronics with colloidal CdHgSe/ZnCdS core/shell nanoplatelets
Hossein Roshan a, Anatol Prudnikau b, Jinfei Dai c, Matilde Cirignano a, Francesco De Boni d, Mirko Prato d, Fabian Paulus b e, Vladimir Lesnyak f, Francesco Di Stasio a
a Photonic Nanomaterials, Istituto Italiano di Tecnologia, 16163, Genova, Italy
b Leibniz-Institute for Solid State and Materials Research (IFW) Dresden, Helmholtzstrasse 20, 01069 Dresden, Germany
c Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
d Materials Characterization Facility, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
e Center for Advancing Electronics Dresden (cfaed), TU Dresden, Helmholtzstrasse 18, 01069 Dresden, Germany
f Physical Chemistry, TU Dresden, Zellescher Weg 19, 01069 Dresden, Germany
Proceedings of Emerging Light Emitting Materials 2024 (EMLEM24)
La Canea, Greece, 2024 October 16th - 18th
Organizers: Grigorios Itskos, Sohee Jeong and Jacky Even
Poster, Hossein Roshan, 047
Publication date: 13th July 2024

Colloidal semiconductor nanocrystals (NCs) represent a versatile and cost-effective class of nanomaterials with significant potential in the field of optoelectronics. These nanomaterials are characterized by their tunable optical and electronic properties, which can be precisely controlled through changes in size, shape, and composition. As a result, NCs have been widely explored for applications such as light-emitting diodes (LEDs), photodetectors, solar cells, and bioimaging. The ability to engineer their optical properties, particularly in the visible and infrared ranges, has made them highly attractive for next-generation technologies. Over recent years, major advancements in NC performance have been driven by improvements in synthetic chemistry, surface passivation, and optimization of device architectures, leading to enhanced quantum efficiencies and stability.

Semiconductor nanoplatelets (NPLs), a subclass of NCs, have garnered special attention due to their unique two-dimensional structure and atomically precise thickness control. Unlike spherical quantum dots, NPLs exhibit uniform thickness down to the atomic level, resulting in sharp and tunable optical transitions, minimal inhomogeneous broadening, and sub-monolayer surface roughness. These properties make NPLs ideal candidates for optoelectronic devices that require high performance and reproducibility. In particular, core/shell NPLs, where a core material is coated with a shell of a different semiconductor, have demonstrated improved stability and enhanced optical properties due to better surface passivation and confinement effects.1

In this study, we investigate the potential of core/shell CdxHg1-xSe/ZnyCd1-yS NPLs for advanced optoelectronic applications, specifically targeting the short-wave infrared (SWIR) spectral range. The SWIR region is crucial for a variety of applications, including telecommunications, biomedical imaging, and environmental monitoring, yet developing efficient materials for SWIR devices remains a challenge. Our work demonstrates the versatility of these core/shell NPLs in both light-emitting and light-detection devices, showcasing their dual functionality as a single material platform for LEDs and photodetectors. This dual capability simplifies the integration of these materials into multifunctional optoelectronic systems, reducing the need for separate NC syntheses for emission and detection functionalities.

By leveraging the unique properties of CdxHg1-xSe/ZnyCd1-yS NPLs, we achieve tunable light emission and sensitive photodetection in the SWIR range, addressing key challenges in the fabrication of integrated optoelectronic systems. The ability to use the same NC material for both LEDs and photodetectors simplifies device fabrication, reduces production costs, and offers a pathway toward more compact and efficient optoelectronic devices. Our findings highlight the promising future of NPL-based materials in the development of next-generation SWIR technologies, with potential for broader applications across the optoelectronics landscape.

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