DOI: https://doi.org/10.29363/nanoge.emlem.2024.035
Publication date: 13th July 2024
Colloidal quantum dots (CQDs) have attracted considerable attention due to their excellent optoelectronic properties, such as tunable band gap and high optical stability. In the visible regime, CQDs materials have already been successfully employed in optoelectronic devices. On the other hand, the burst of near infrared (NIR) technologies such as detectors, face recognition, food monitoring, and telecommunication are prerequisite materials emitting at the low energy part of the electromagnetic wavelength. Nevertheless, despite the plethora of semiconductors in visible region, only a few examples exist with a tunable band gap in NIR with lead sulphide (PbS) semiconductor CQDs taking the lead due to the high spectral tunability (500-3000nm). Therefore, here we focus on the synthesis of shell engineered PbS CQDs emitting at telecommunication wavelengths (1500-1620nm) for lasing applications. The high degeneracy of PbS (8-fold) is the main bottleneck for the realization of low-threshold lasing due to the Auger limited gain. Hence, we synthesised a series of core/shell PbS/CdS CQDs with suppressed Auger rates and tunable band-edge absorption across the telecom spectral window. The epitaxial growth of the CdS shell was achieved via cation exchange reaction, producing CQDs of high optical stability, narrow size distribution and low trap state density, reaching Auger lifetimes up to 320 ps.
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