Publication date: 13th July 2024
Indium arsenide (InAs) colloidal quantum dots (QDs) are emerging, heavy-metal free, nanomaterials with tunable bandgap and promising applications across the NIR spectrum. Incorporation of InAs QDs into optoelectronic devices is dependent on the ability to tailor and improve their solid state, transport properties. One of the most efficient ways to achieve this, is by electronically doping the QDs to produce p-n-junctions that traditionally have served as the main building blocks for semiconductor electronic devices.
In this work, we study the solid-state, photophysical properties of colloidal n- and p-doped InAs QDs fabricated via a recently developed synthetic approach1. Based on such synthetic protocol, the as-grown n-type InAs NCs can be transformed to p-type by appropriate introduction of Zn that serves as a substitutional p-type acceptor within the InAs lattice. Variable temperature, steady-state and transient absorption and photoluminescence spectroscopies are employed to probe the impact of the Zn-doping on the QD optical properties and their variation compared to the respective properties of as-grown n-doped QD films. The work provides insight into the impact of Zn-doping on the exciton recombination, radiative yield and lifetime and exciton-phonon coupling in thin films of doped InAs QDs.
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