Publication date: 13th July 2024
Carrier transport in quantum dot solids is key parameter for highly efficient optoelectronic devices. InP quantum dots (QDs) are classified as an eco-friendly material unlike Pb- or Cd-based QDs. However, InP QDs are known to have many electronic traps due to uncoordinated atoms and oxygenated on surface. Here we observe prolonged carrier diffusion length of ~100 nm in InP QD solids through surface passivation with hydrofluoric acid (HF) treatment using ultrafast transient absorption microscopy (TAM). TAM is powerful tool for tracking exciton and charge carrier population with highly temporal resolution of ~200 fs and spatial accuracy of ~50 nm. Energetic disorder has a very detrimental effect on carrier transport in QD solids. [1] There are similar edge length distribution of HF-treated and non-treated were measured with 7.1 and 6.9 nm respectively. They have also nearly same band gap with absorption features at ~700 nm, but improved photoluminescence for HF-treated InP in colloidal solution. Surface trap passivation is also one of the efficient ways to enhance charge carrier mobility of QD solids.
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