Publication date: 18th August 2023
Perovskite semiconductors are widely studied in the context of solar light harvesting
used for photovoltaic applications, but less in the context of their fundamental physical
properties. As a medium exhibiting strong light-matter coupling, they may constitute an
interesting platform for optoelectronics and opto-spintronics in particular.
Our long-term goal is to develop a method of precise creation of van der Waals heterostructures
containing lead iodide perovskites thin film encapsulated in hexagonal boron
nitride - needed for the protection of the perovskite material from contamination and
degradation. Such structures can be precisely positioned on photonic microcavities, enabling
an extended study of perovskite properties. Furthermore, an electrostatical gating
of the sample allows to control the charge density in studied structures in a reliable way,
thus opening the path to the study of spin dynamics in those materials to explore their
potential applications in optospintronics. The electrostatic gating in the proposed method
is performed with the use of a Silicone substrate with prepared in advance conducting
gates.
In our approach we modify the methods widely applied for the fabrication of transition
metal dichalcogenide (TMD) structures, not only to obtain precisely assembled perovskite
structures of high optical quality, but also to exploit the possibility to combine them with
TMD materials in the future.
This work has received support from the Polish National Agency for Academic Exchange within Polish Returns program under Grant No. PPN/PPO/2020/1/00030.
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