DOI: https://doi.org/10.29363/nanoge.emlem.2023.049
Publication date: 18th August 2023
InP-based quantum dots are a bright and non-toxic alternative for lighting applications. However––unlike for quantum dots based on cadmium or perovskite materials––achieving lasing is difficult. Previously, the relatively low gain has been suggested to be caused by a high band-edge degeneracy for holes.[1] While this explains the inability of single excitons to counteract absorption by stimulated emission, it does not explain that multiexcitons contribute so little to gain.
In this work, we suggest that hot-carrier trapping might limit gain in red-emitting InP/ZnSe/ZnS core–shell–shell quantum dots.[2] Using pump–push–probe spectroscopy, we find that a fraction of the hot carriers created by intraband absorption of a push pulse are lost due to ultrafast trapping. Interestingly, single-QD measurements reveal that these hot-carrier losses do not lower the quantum yield but instead introduce broad and redshifted trap-state emission with a low oscillator strength compared to band-edge emission. Our results show that combining spectroscopic techniques is necessary to evaluate quantum-dot performance in more advanced applications.
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