Publication date: 18th August 2023
Indium arsenide (InAs) colloidal quantum dots (QDs) stand out as promising nanomaterials for near-infrared (NIR) applications, showing tunable bandgap across the NIR window while complying with RoHS regulations. Recent advances in the synthesis and surface chemistry of InAs QDs, allowed the fabrication of material with improved optoelectronic properties and environmental stability enabling the demonstration of novel applications in light emission and photodetection. Despite the progress, many aspects of the fundamental optoelectronic properties of such QDs especially in the form of thin films are still elusive.
In this work, we study the solid-state, photophysical properties of colloidal core and core/shell InAs QDs fabricated via a novel synthetic approach developed recently [1]. Variable temperature, steady-state and transient photoluminescence (PL) are employed to investigate InAs core and InAs/ZnSexS1-x core/shell, pristine and polymer-QD blend thin films. The work provides insight into the exciton physics of InAs QDs, probing properties such as the exciton binding energy, radiative lifetime, and exciton-phonon coupling.
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