DOI: https://doi.org/10.29363/nanoge.emlem.2023.018
Publication date: 18th August 2023
In recent years, InAs colloidal quantum dots have gained significant interest due to their potential role as foundations for cutting-edge Short-Wave Infrared (SWIR) optoelectronic devices. Despite the promise these materials hold, the progress in synthetic development and the advancement in material design of InAs nanocrystals has been hindered by two major factors: the limited choices of synthetic precursors available for use and a prevailing lack of comprehensive understanding regarding the underlying reaction pathways that form these nanocrystals. In this presentation, we will navigate through the field of precursor chemistry, employing widely used Arsenic precursors to broaden the window of reaction conditions. Our novel approach, involving the systematic exploration and adoption of these Arsenic precursors, has enabled us to achieve a major breakthrough: the synthesis of size-tunable InAs nanocrystals exhibiting remarkable band-edge absorption extending up to 1700 nm. Furthermore, we will unveil the groundbreaking results of our relentless efforts in synthesizing Zinc-doped InAs nanocrystals using precursor chemistry. This achievement, a significant milestone, advances the quest for creating unprecedentedly highly doped p-type materials.
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