DOI: https://doi.org/10.29363/nanoge.emlem.2022.014
Publication date: 15th July 2022
Near-infrared Light-emitting diodes (NIR-LEDs) based on colloidal semiconductor quantum dots (QDs) are of interest for a variety of optoelectronic applications such as hyperspectral and biomedical imaging, night vision and telecommunication systems. Importantly, all efficient NIR-LEDs based on QDs employ toxic heavy metals compositions [1] while The European Union’s “Restriction of Hazardous Substances” (RoHS) directive limits the use of such compounds. Colloidal indium arsenide QDs are emerging as a promising candidate for NIR applications[2] thanks to their low toxicity and recent progresses in material synthesis leading to stable and highly efficient QDs [3]. Here, we fabricated NIR-LEDs emitting in the range of 800-1000 nm based on heavy metal-free efficient InAs/ZnSe core-shell QDs (PLQY >40%) [3]. The resulting external quantum efficiency of NIR-LEDs benefited from nanoengineering at both material and device levels. This study demonstrates that InAs based QDs are a promising nanomaterial for the fabrication of optoelectronic devices operating in the NIR.
We acknowledge support from the European research council project NANOLED (ERC-StG 851794) and the MSCA individual fellowship INFLED (101024823). This work was performed in part in the Clean Room Facility of the Istituto Italiano di Tecnologia; its support and resources are here acknowledge.
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