Publication date: 14th September 2023
Metal Halide Perovskite recently has emerged as a next-generation semiconducting material due to its excellent optoelectronic properties. PEDOT:PSS as hole transport layer [HTL] is well known due to its reliable hole transport properties as demonstrated in the field of OLEDs. But in Pe-LED, it shows limitations with its HOMO level, severe photoluminescence quenching and poor surface morphology. In this contribution, systematic modifications have been performed at HTL and perovskite emission layer interface to reduce the limitations by inserting a thin layer of (Lithium Fluoride) LiF layer at the interface. The exciton quenching by PEDOT:PSS has been addressed and minimized, which results in an increased radiative recombination which is confirmed by the enhanced PL and prolonged exciton lifetime. In addition, the LiF layer significantly reduced the surface roughness crucial for efficient Pe-LED devices. Furthermore, defects are prominent for the perovskite emission layer processed by solution method, to overcome defects we used the additive-based nanocrystal pinning method where we introduced an electron-transporting small molecule namely TPBi in the antisolvent during the formation of the perovskite emission layer. The introduction of TPBi molecule during the crystallization process has resulted in a smaller perovskite grain size and the optimized Pe-LEDs show luminance, current and power efficiency, and EQE of 10250 cd/m2, 15.67 cd/A, 8.62 lm/W and 3.41 % respectively.
Susmita Mukherjee acknowledges IISER Berhampur for providing a Ph.D. Fellowship, Ashutosh Panigrahi, Acknowledges DST Inspire for providing scholarship, and Ajay Perumal, acknowledges DST-SERB (ECRA/2019/000026, CRG/2022/009035) and IISER Berhampur (Initiation grant) for financial support.
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