DOI: https://doi.org/10.29363/nanoge.DEPERO.2023.011
Publication date: 14th September 2023
Recently we suggested a new solar cell loss analysis by using the absorptance or simple external quantum efficiency (EQE) measured with sufficiently high sensitivity to also account for defects. Unlike common radiative-limit methods, where the impact of deep defects is ignored by exponential extrapolation of the Urbach absorption edge, our loss analysis considers the full EQE including states below the Urbach edge and uses corrections for band-filling and light trapping. We validate this new metric on a whole range of photovoltaic materials and verify its accuracy by electrical simulations. Any deviations between this newly established metric and experimental open circuit voltage are due to the presence of spatially localized defects and are explained as violations of the assumption of flat quasi-Fermi levels through the device [1]. Newly, the reciprocity between photoluminescence and absorptance will be discussed and the method of experimental determination of light trapping correction factor will be introduced and experimentally validated on the perovskite layers deposited on substrates with different roughness.
The work was supported by the Czech Science Foundation grant no 23-06543S
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