Device Simulations of Perovskite Transistors Containing Mobile Iodide

Doaa Shamalia^a, Nir Tessler^a

^aSara and Moshe Zisapel Nano-electronic Center, Electrical and Computer Electronics, Technion Israel Institute of Technology, Haifa, Israel

Proceedings of Device Physics Characterization and Interpretation in Perovskite and Organic Materials (DEPERO)

VALÈNCIA, Spain, 2023 October 3rd - 5th

Organizers: Sandheep Ravishankar, Juan Bisquert and Evelyne Knapp

Oral, Doaa Shamalia, presentation 005
DOI: https://doi.org/10.29363/nanoge.DEPERO.2023.005
Publication date: 14th September 2023

Lead halide perovskites have attracted significant attention over the last decade,[1] particularly in light harvesting.[2] Since the ground-breaking works demonstrated the potential of perovskite materials for photovoltaics, the field has advanced rapidly, with record efficiencies exceeding 25% within less than a decade.[3] In parallel to the extensive study of solar cells, lead halide perovskite thin film transistors (TFTs) are being developed. Reports on perovskite TFTs show dominant ionic effects causing large hysteresis, gate voltage screening, device degradation, and lack of saturation in the current. Several attempts to minimize these effects are made, such as measurements in cryogenic conditions to reduce ionic conductivity, or pulsed mode measurements to minimize the slow ionic response. Still, most of the experimental data on perovskite TFTs lack current saturation.[4-9]

Namely, the field is still in its infancy, with the entrance barrier being the ability to control the ion-related effects. To address this ion migration phenomenon and provide physical reasoning for the various experimental reports, we present a 2D device simulation of lead-halide perovskite-based TFTs containing mobile charged species using Sentaurus Device by Synopsys®. Examining the transistor output performance for different average ion densities and scan durations. We found that the sign of the mobile specie creates a difference between electron-channel (negative channel) and hole-channel (positive channel) TFTs. Moreover, we found that the incomplete saturation is due to ions’ effect on the charge extraction through the contacts and not to channel effects (as screening etc.). Building on the importance of the JV scan protocol for solar cells, we devote significant attention to the role of the voltage scan speed.

Since, comparing electron-channel and hole-channel TFTs can help decipher the sign of the dominant mobile ion, its density, and its dynamic within the film, utilizing the same perovskite materials as in solar cells would allow researchers to improve the understanding of the mechanisms governing solar PVs and better their performance.

Shamalia, D. and N. Tessler, Device Simulations of Perovskite Transistors Containing Mobile Iodide. Submitted.

References:

[1] Onoda-Yamamuro, N., T. Matsuo, and H. Suga, Dielectric study of CH3NH3PbX3 (X = Cl, Br, I). Journal of Physics and Chemistry of Solids, 1992. 53(7): p. 935-939.

[2] Kojima, A., et al., Organometal Halide Perovskites as Visible-Light Sensitizers for Photovoltaic Cells. Journal of the American Chemical Society, 2009. 131(17): p. 6050-6051.

[3] Bitton, S. and N. Tessler, Perovskite ionics – elucidating degradation mechanisms in perovskite solar cells via device modelling and iodine chemistry. Energy & Environmental Science, 2023.

[4] Snaith, H.J., et al., Anomalous Hysteresis in Perovskite Solar Cells. The Journal of Physical Chemistry Letters, 2014. 5(9): p. 1511-1515.

[5] Kagan, C.R., D.B. Mitzi, and C.D. Dimitrakopoulos, Organic-Inorganic Hybrid Materials as SemicoKagan, C.R., D.B. Mitzi, and C.D. Dimitrakopoulos, Organic-Inorganic Hybrid Materials as Semiconducting Channels in Thin-Film Field-Effect Transistors. Science, 1999. 286(5441): p. 945.nducting Channels in Thin-Film Field-Effect Transistors. Science, 1999. 286(5441): p. 945.

[6] Yusoff, A.R.b.M., et al., Ambipolar Triple Cation Perovskite Field Effect Transistors and Inverters. Advanced Materials, 2016. 29(8): p. 1602940.

[7] Senanayak, S.P., et al., Understanding charge transport in lead iodide perovskite thin-film field-effect transistors. Science Advances, 2017. 3(1).

[8] Matsushima, T., et al., Toward air-stable field-effect transistors with a tin iodide-based hybrid perovskite semiconductor. Journal of Applied Physics, 2019. 125(23): p. 235501.

[9] Kim, H.P., et al., A hysteresis-free perovskite transistor with exceptional stability through molecular cross-linking and amine-based surface passivation. Nanoscale, 2020. 12(14): p. 7641-7650.

Acknowledgements:

This research was supported by the Ministry of Innovation, Science and Technology Israel and the Neubauer Family Foundation.

*The opinions expressed in this report are those of the author(s) and do not necessarily reflect the views of the Neubauer Family Foundation.

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