Proceedings of Online seminar on properties of perovskite solar cells (CPPSC20)
Publication date: 12th March 2020
A memristor is a device with two very different states of conduction that can be controled by applied voltage. Herein, we leverage the hysteresis in ruddlesdsen-popper organic-inorganic hybrid perovskites for resistive switching through tuning the structural layers and judicious selection of the external contacts. We elucidate a universal working mechanism that relies on the accumulation of ions migrated to the contacts under an applied electric field, and the subsequent chemical/physical interaction of these accumulated ions with the external contacts that control the switching behavior. Impedance spectroscopy (IS) experiments reveal the kinetics of the activation process that involves a reduction in the charge transfer resistance connected to the perovskite/contact interface through a chemical reaction. The n ̅= 5 sample also exhibit good data retention capability and environmental stability. We propose a general method to tune/enhance memory effect ReRAMs in the desired I-V quadrant by selection of appropriate RP perovskite and electrode materials. Our findings uncover new opportunities offered by RP perovskites for RS and reliable data retention for memory device applications.
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