Dependence of Photovoltaic Performance on NiO Thin Layers Annealed at Different Atmospheres
Xing Zhao a, Jiangzhao Chen a, Nam-Gyu Park a
a Sungkyunkwan University, South Korea, 300 Cheoncheon-dong, Jangan-gu, Suwon, 440, Korea, Republic of
Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics
Proceedings of International Conference Asia-Pacific Hybrid and Organic Photovoltaics 2018 (AP-HOPV18)
Kitakyūshū-shi, Japan, 2018 January 28th - 30th
Organizers: Shuzi Hayase, Juan Bisquert and Hiroshi Segawa
Poster, Xing Zhao, 103
Publication date: 27th October 2017

NiO-based inverted perovskite solar cells (PSCs) show great potential due to the good stability and hysteresis-free properties. However, the photovoltaic performance of the devices is significantly dependent on oxidation state of Ni, oxygen vacancy and electrical properties of NiO films. Here, we have investigated effects of annealing atmospheres (including air, O2, N2 and Ar) of NiO films. We have found that photovoltaic performance of the devices is strongly dependent on annealing atmospheres of NiO thin films. Under air and O2 atmosphere, the formation of the Ni3+ vacancies enhances the conductivity which promotes the charge collection leading to a better photovoltaic performance. In contrast, the devices using NiO films annealed in inert or reduction atmospheres such as Ar or N2 show much lower efficiency because of the poor conductivity. The best photovoltaic performance is achieved under air atmosphere with an efficiency of 15.05% which is higher than annealed in O2, N2 and Ar conditions.

© FUNDACIO DE LA COMUNITAT VALENCIANA SCITO
We use our own and third party cookies for analysing and measuring usage of our website to improve our services. If you continue browsing, we consider accepting its use. You can check our Cookies Policy in which you will also find how to configure your web browser for the use of cookies. More info