Proceedings of International Conference Asia-Pacific Hybrid and Organic Photovoltaics 2018 (AP-HOPV18)
Publication date: 27th October 2017
Sn-doped SnO2 (FTO) films were grown on a glass substrate by spray pyrolysis at 500 degree C. The (200) orientation became more pronounced with increasing F-doping concentration. This indicated that F-doping caused the degree of crystallinity of the SnO2 films to increase. F-doping caused the resistivity to decrease and the carrier concentration to increase. This is due to the fluorine atoms acting as donor-type impurities, increasing the number of free electrons. Hall measurements indicated n-type conduction in all of the non-doped and F-doped SnO2 films. The lowest resistivity of 4:0 × 10-4 ohm cm could be obtained at a F concentration of 17 mol%. Its carrier concentration and mobility were 4:7 × 1020 cm-3 and 34 cm2 (V s)-1, respectively. Furthermore, the average optical transmittance, which was more than 80% in visible region, was nearly constant with increasing F-doping concentration. A perovskite-based solar cell such as Au/Spiro-OMeTAD/CH3NH3PbI3/ SnO2/FTO/glass was fabricated. The efficiency of the obtained device is 6.4% with the short-circuit current density (Jsc) of 19.2 mA/cm2, open circuit voltage (Voc) of 0.78 V, and fill factor (FF) of 0.43.