Improvement of efficiency for mixed metal Sn/Pb perovskite solar cells
Ryo Tanaka a, Kengo Hamada a, Qing Shen b, Taro Toyoda b, Yuhei Ogomi a, Shuzi Hayase a
a Kyushu Institute of Technology, Japan, 204 Hibikino Wakamatsu-ku, Kitakyushu - Fukuoka, 808, Japan
b Graduate School of Informatics and Engineering, University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan
Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics
Proceedings of International Conference Asia-Pacific Hybrid and Organic Photovoltaics 2018 (AP-HOPV18)
Kitakyūshū-shi, Japan, 2018 January 28th - 30th
Organizers: Shuzi Hayase, Juan Bisquert and Hiroshi Segawa
Poster, Ryo Tanaka, 092
Publication date: 27th October 2017

 We have already reported that mixed metal perovskite (MAPbSnI3) shows photoconversion in IR region. Due to the light harvesting properties up to 1000 nm, high short circuit current (Jsc) was observed(1). However, the open-circuit voltage (Voc) was lower than 0.3 V and the estimated voltage loss was 0.6-7V, which was much larger than that of MAPbI3 (0.4 V). The main purpose of this work is to increase the efficiency of mixed metal Sn/Pb perovskite solar cells and is to clarify effect of passivation on TiO2 surface .We focused on the interface between TiO2 and perovskite layer, because we have already reported suppressed effect of interfacial traps between them. Our investigation of thermally stimulated current measurement on the substrate which mimicked the interface of TiO2 and perovskite reveals that Ti-O-Sn linkage on the interface created traps which cause charge recombination. This was further confirmed by transient absorption spectroscopic measurements. So as to avoid the formation of Ti-O-Sn linkages, the surface of compact TiO2 (c-TiO2) was passivated with [6,6]-phenyl-C61-butyric acid (PCBA) before the Sn/Pb perovskite layer was fabricated. Solar cells were fabricated in the device configuration “FTO/c-TiO2 passivated with PCBA /CH3NH3Sn0.3Pb0.7I3/ P3HT/Au. Because of the PCBA passivation Voc increased from minimum of 0.3 V to maximum of 0.5 V.

Reference

1. Yuhei Ogomi, Atsushi Morita, Syota Tsukamoto, Takahiro Saitho, Naotaka Fujikawa, Qing Shen, Taro Toyoda, Kenji Yoshino, Shyam S. Pandey, Tingli Ma, and Shuzi Hayase, J. Phys. Chem. Lett. 2014, 5, 1004−1011

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