Design and Synthesis of a New Lead-free Double Perovskite Cs2NaBiI6
Chu Zhang a, Tingli Ma a b, Zhanglin Guo a, Liguo Gao b, Shuai Zhao c
a Kyushu Institute of Technology, Japan, 204 Hibikino Wakamatsu-ku, Kitakyushu - Fukuoka, 808, Japan
b School Petroleum and Chemical Engineering, Dalian University of Technology, Panjin Campus, Panjin, 124221
c School of Science, Chongqing University of Technology
Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics
Proceedings of International Conference Asia-Pacific Hybrid and Organic Photovoltaics 2018 (AP-HOPV18)
Kitakyūshū-shi, Japan, 2018 January 28th - 30th
Organizers: Shuzi Hayase, Juan Bisquert and Hiroshi Segawa
Poster, Chu Zhang, 078
Publication date: 27th October 2017

In recent years, lead based perovskites has become the most promising photovoltaic material showing excellent photoelectronic performance. However, lead based perovskite material also generates significant environmental impact due to its toxicity and instability. Therefore, the development of new lead-free perovskite materials becomes an urgent requirement for the application of perovskite solar cells. Among many substitute materials of lead based perovskite, double perovskite material is especially promising, which is highly stable, non-toxic, has proper band structure and long carrier lifetime. Recently many studies aiming at double perovskite light absorber were reported, both theoretically and practically. Under the guidance of theoretical calculation, we firstly reported the synthesis of new lead free double perovskite material Cs2NaBiI6. The as-synthesized double perovskite possesses a shuttle-like crystal shape, and its detailed crystal growth process were observed. With XRD and XPS tests, we analyzed the component of the as-prepared sample. We have also explored its optical properties and application to solar cells. The as-prepared double perovskite shows high air stability and has a bandgap of 1.68eV. In addition, we studied how condition parameters would affect the synthesis process. Although the fabrication of Cs2NaBiI6 devices encountered difficulties due to bad interface of between the double perovskite layer and the HTM layer, Cs2NaBiI6 is still a promising material for the photovoltaic photovoltaic devices.

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